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n-channel logic level enhancement mode field effect transistor samhop microelectronics corp. product summary v dss i d r ds(on) ( ) typ 650v 4a 2.5 @ vgs=10v www.samhop.com.tw 1 details are subject to change without notice. symbol v ds v gs i dm w a p d c -55 to 175 i d units parameter 650 4 11 v v 30 t c =25 c gate-source voltage drain-source voltage absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b maximum power dissipation operating junction and storage temperature range t j , t stg t c =25 c a t c =100 c a 2.8 t c =100 c w e as mj single pulse avalanche energy d 100 features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. 83 42 thermal characteristics 50 c/w thermal resistance, junction-to-ambient r ja 1.8 c/w thermal resistance, junction-to-case r jc jan,02,2014 ver 2.3 e sdu/d04n65 green product sdd series to-251s(i-pak) g s d g s d sdd sis t-21(i-pa) g s sdu sis t-22(d-pa) d ordering information ordering code package marking code delivery mode rohs status sdd04n65hs to-251s to-251l sdd04n65 sdd04n65 tube tube halogen free sdu04n65hz to-252 sdu04n65 reel halogen free sdd04n65hl halogen free
4 symbol min typ max units bv dss 650 v 1 i gss 100 na v gs(th) 2 v g fs 3.3 s v sd c iss 490 pf c oss 54 pf c rss 12 pf q g 23 nc 17 nc q gs 29 nc q gd 12 t d(on) ns t r 1.7 ns t d(off) 3.8 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =325v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =325v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =2a v ds =20v , i d =2a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =520v , v gs =0v v gs = 30v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 3.2 c f=1.0mhz c v ds =325v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a 0.81 v notes www.samhop.com.tw 2 8.2 _ _ a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=50mh,v dd = 50v.(see figure13) e.drain current limited by maximum junction temperature. 2.5 1.4 3 jan,02,2014 ver 2.3 sdu/d04n65
www.samhop.com.tw 3 figure 1. output characteristics v ds , drain-to-source voltage (v) i d , drain current(a) figure 2. transfer characteristics v gs , gate-to-source voltage (v) i d , drain current(a) i d , drain current (a) tj( c) tj, junction temperature ( c) vth, normalized gate-source threshold voltage tj, junction temperature ( c) figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) r ds(on) , on-resistance normalized drain current and temperature figure 4. on-resistance variation with and gate voltage figure 3. on-resistance vs. drain current r ds(on) ( ) 5 4 3 2 1 0 0 5 10 15 20 25 30 6 5 4 3 2 1 0 0.1 123 4 5 v gs = 10v v gs = 6v v gs = 5v 3.0 2.4 1.8 1.2 0.6 0 0 1.2 7.2 6.0 4.8 3.6 2.4 -55 c t j =125 c 25 c 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs = 10v i d =2a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 125 150 100 75 50 25 0 -25 -50 i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 v gs = 10v jan,02,2014 v gs = 7v ver 2.3 sdu/d04n65
www.samhop.com.tw 4 gate-source voltage figure 7. on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) v ds , drain-to source voltage(v) v gs , gate to source voltage (v) figure 10. gate charge qg, total gate charge(nc) r ds(on) ( ) figure 12. maximum safe i d , drain current (a) v ds , drain-source voltage (v) operating area switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 9.0 7.5 6.0 4.5 3.0 1.5 0 10 0 i d =2a 2 46 8 25 c 125 c 75 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 125 c 75 c 1200 1000 800 600 400 200 0 010 20 30 40 50 ciss coss crss vds=325v id=1a td(on) tr tf v ds =325v, i d =1a v gs =10v td(off) 10 8 6 4 2 0 0 3 6 9 12 300 100 10 1 110 100 r d s ( on ) li mit 10 1 0.1 0.01 0.1 110 100 1000 jan,02,2014 v gs =10v single pulse t a =25 c 100us 1 m s 1 0ms d c ver 2.3 sdu/d04n65
www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. 2. 3. 4. single pulse t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 1 r ja r ja(t)=r(t)* r ja=see datasheet t jm -t a =p dm * r ja(t) duty cycle,d= t 1 / t 2 jan,02,2014 ver 2.3 sdu/d04n65
sdu/d04n65 ver 2.3 www.samhop.com.tw jan,02,2014 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380
www.samhop.com.tw 7 package outline dimensions to-251s b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 2.3 jan,02,2014 sdu/d04n65
ver 2.3 www.samhop.com.tw jan,02,2014 8 package outline dimensions sdu/d04n65 to-251l a1 d a e l1 b1 b2 e c e1 c1 symbol millimeters min nom a 6.40 6.50 a1 5.30 5.40 a2 4.30 b 1.35 1.50 l1 l d 5.40 5.55 c0.55 0.60 c1 e1 1.72 e 2.20 2.30 0.60 0.75 b1 b 4.40 1.77 l b2 1.55 ref 7.40 7.70 0.70 0.85 a2 b4 b3 b3 b4 e max 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.49 0.54 0.59 1.82 2.40 0.80 0.90 2.30
www.samhop.com.tw 9 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @* a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h jan,02,2014 ver 2.3 sdu/d04n65
www.samhop.com.tw 10 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) sdu04n65 smc internal code no. (a,b,c...z) ver 2.3 sdu/d04n65 jan,02,2014
www.samhop.com.tw 11 top marking definition to-251s ver 2.3 sdu/d04n65 to-251l xxxxxx sdd04n65 wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. (a,b,c...z) product no. samhop logo xxxxxx sdd04n65 production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b.....) wafer lot no. smc internal code no. (a,b,c...z) jan,02,2014

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